Model: SI4410DY-T1-E3-VB.
Silk screen: VBA1311.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Rated voltage: 30V .
- Maximum continuous current: 12A.
- Static on-resistance (RDS(ON)): 12mΩ @ 10V, 15mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth) : 0.8V to 2.5V.
- Package: SOP8.
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Detailed parameter description: .
SI4410DY-T1-E3-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 30V and a maximum continuous current of 12A. Its RDS(ON) performs well at different voltages, 12mΩ @ 10V and 15mΩ @ 4.5V respectively. The threshold voltage (Vth) ranges from 0.8V to 2.5V. .
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Application Introduction: .
SI4410DY-T1-E3-VB is commonly used in power management, power switches and power converter applications, especially for circuits requiring N-channel MOSFETs. The SOP8 package makes it easy to integrate into a variety of electronic devices and circuits. This type of MOSFET features low on-resistance and high current handling capabilities, providing excellent performance and high efficiency. It is suitable for modules in a variety of fields such as power switches, power converters, battery protection circuits, power management, power amplifiers, power tools and other low to medium power applications. The range of threshold voltages makes it suitable for a variety of circuit designs, providing reliable performance under different voltage conditions.