Model: SI4401BDY-T1-E3-VB.
Silk screen: VBA2412.
Brand: VBsemi.
Parameters:.
- Channel type: P channel.
- Rated voltage: - 40V.
- Maximum continuous current: -11A.
- Static on-resistance (RDS(ON)): 13mΩ @ 10V, 17mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage ( Vth): -1.7V.
- Package: SOP8.
.
Detailed parameter description: .
SI4401BDY-T1-E3-VB is a P-channel metal oxide semiconductor field effect transistor (MOSFET) device with a voltage rating of -40V and a maximum continuous current of -11A. Its RDS(ON) performs well at different voltages, 13mΩ @ 10V and 17mΩ @ 4.5V respectively. Additionally, its threshold voltage (Vth) is -1.7V. .
.
Application Introduction: .
SI4401BDY-T1-E3-VB is a high-performance P-channel MOSFET, suitable for circuit applications requiring P-channel devices. Due to its P-channel characteristics, it is commonly used in power switches, battery protection circuits, negative power switches and other applications requiring P-channel MOSFETs. The SOP8 package makes it easy to integrate into small electronic devices. This type of MOSFET provides reliable performance in applications requiring high-performance P-channel switches and is suitable for modules in power management, battery protection, negative supply control and other areas. Its low on-resistance and high current handling capabilities make it useful in high-efficiency and high-power applications.