Model: SI2304BDS-T1-GE3-VB.
Screen printing: VB1330.
Brand: VBsemi.
Parameters:.
- Channel type: N—Channel.
- Rated voltage: 30V .
- Rated current: 6.5A.
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): 1.2~2.2V.
- Package: SOT23.
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Application introduction:.
VBsemi’s SI2304BDS-T1-GE3-VB is an N-Channel channel field effect transistor, suitable for low voltage and low power. Application scenarios, widely used in various electronic systems and modules to provide efficient power control and switching performance. .
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**Main features:**.
1. Suitable for low voltage working environment, rated voltage is 30V. .
2. Low on-resistance, providing high-efficiency power control performance. .
3. Wide operating voltage range, suitable for a variety of power supply systems. .
4. The threshold voltage range is flexible and can meet different driving needs. .
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**Application areas and modules:**.
1. **Power switch module:** Used to build low-power, portable power switch modules, suitable for mobile devices, wireless sensors, etc. field. .
2. **DC-DC converter:** In low-power DC converter, it provides high-efficiency power conversion and is suitable for portable devices, embedded systems and other scenarios. .
3. **Motor drive and control system:** Suitable for low-power motor drive modules, such as power tools, electronic toys and other fields. .
4. **Signal Amplifier:** Can be used to build low-power signal amplifiers, suitable for audio amplifiers, sensor interfaces and other fields. .
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**Usage Precautions:**.
1. Please make sure to connect the device correctly during design and avoid reverse connection and overload to prevent damage to the device. .
2. Please use voltage and current according to the maximum ratings provided in the data sheet to ensure stable and reliable performance. .
3. Pay attention to appropriate heat dissipation measures to maintain the appropriate temperature of the device during operation. .
4. Ensure that the device operates under specified environmental conditions and avoid exceeding temperature and voltage limits.