Model: SI1304BDL-T1-GE3-VB.
Silk screen: VBK1270.
Brand: VBsemi.
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Detailed parameter description:.
- Channel type: N channel.
- Rated voltage: 20V.
- Maximum current: 4A.
- Static on-resistance (RDS(ON)): 45mΩ @ 10V, 49mΩ @ 4.5V, 60mΩ @ 2.5V.
- Gate Source voltage (Vgs): ±12V.
- Threshold voltage (Vth): 1~3V.
- Package type: SC70-3.
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Application introduction:.
SI1304BDL- T1-GE3-VB is an N-channel field effect transistor, suitable for modules and circuits in a variety of electronic fields. The following are some of the main application areas of this product: .
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1. **Power Management**: This transistor can be used in power management modules to help achieve efficient control and management of power, especially in portable devices . .
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2. **Current Control**: Due to its high current carrying capacity and low on-resistance, it is suitable for electronic modules that require current control, such as motor drive, battery charge and discharge control, etc. .
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3. **Signal switch**: SI1304BDL-T1-GE3-VB can be used in signal switch circuits, suitable for data transmission and signal processing modules, such as high-frequency applications. .
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4. **LED lighting**: In the LED lighting control module, this transistor can be used as a current regulator and switch to achieve brightness control and color temperature adjustment. .
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5. **Battery Protection**: It can also be used in the battery protection module to ensure that the battery remains safe and stable during charging and discharging. .
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In short, SI1304BDL-T1-GE3-VB is suitable for a variety of electronic modules and circuits, including power management, current control, signal switches, LED lighting and battery protection. Its N-channel characteristics, high current handling capability and low on-resistance make it a widely used component. .