Model: RU30L15H-VB.
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**Silkscreen:** VBA2311.
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**Brand:** VBsemi.
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**Parameters:**.
- Type: P-channel.
- Rated voltage (Vds): -30V.
- Maximum current (Id): -11A.
- Static drain-source resistance (RDS(ON)): 10mΩ @ 10V, 13mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): -1.42V.
- Package: SOP8.
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**Product Introduction:**.
RU30L15H-VB is a P-channel field effect transistor produced by VBsemi, suitable for a variety of electronic applications. The device has low drain-source resistance (RDS(ON)) and moderate current handling capability, suitable for circuits requiring efficient energy consumption control. .
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**Main features:**.
- Low on-resistance: It has low static drain-source resistance (RDS(ON)), which helps reduce power consumption and improve efficiency. .
- High current handling capability: It can withstand higher current and is suitable for high-power applications. .
- SOP8 package: The SOP8 package is small and suitable for compact circuit design. .
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**Application areas:**.
RU30L15H-VB is generally used in the following fields and modules: .
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1. **Power switching device:** Due to its high current handling capability and low on-resistance, it is often used as a power switching device such as switching power supplies, inverters and regulators to improve the efficiency and performance of the circuit. .
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2. **Motor Control:** This model can also be used as a switching element in a motor controller to achieve efficient control of motors, such as DC motor and stepper motor control. .
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3. **Power Management:** RU30L15H-VB can be used in power management modules such as battery charging, power selection, and power switching to achieve efficient power management. .
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4. **Power Amplifier:** In a power amplifier circuit, it can be used to enhance the performance of a signal amplifier. .
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It should be noted that specific application areas may vary depending on product usage, circuit design, and specification requirements. When selecting and using this model, it is recommended to determine its suitability based on the electrical characteristics and performance requirements of the specific application. This device is suitable for applications that require high power, high current, and efficient energy consumption control.