**VBsemi RJE0605JPD-00-J3-VB Detailed parameter description: **.
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- **Silk screen: ** VBE2658.
- **Brand: ** VBsemi.
- * *Parameters: **.
- **Package:** TO252.
- **Channel type:** P-Channel.
- **Maximum voltage:** -60V.
- **Maximum current:** -22A.
- **On resistance:** RDS(ON) = 48mΩ @ VGS=10V, VGS=20V.
- **Gate source threshold voltage :** Vth=-1.5V.
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**Application introduction:**.
RJE0605JPD-00-J3-VB is widely used in various electronic modules, especially in the following field modules: .
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1. **Power module:** Used for load switching and regulating circuits, suitable for medium power applications. .
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2. **Battery Management:** In portable devices and battery-powered systems, used for battery charge and discharge management. .
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3. **Signal switch:** As a signal switching device, it is used to control the connection and disconnection of signals. .
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**Function:**.
On these modules, RJE0605JPD-00-J3-VB plays the following functions: .
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1. **Medium power conversion: ** Suitable for medium power applications, providing reliable power conversion. .
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2. **Current Control:** Through precise current control, it is suitable for applications requiring low-power current management. .
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3. **Load switch:** In the load switch circuit, it is used to control the connection and disconnection of the power supply to achieve energy conversion. .
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**Precautions for use:**.
- It is necessary to ensure that the operating voltage and current do not exceed the specified maximum values. .
- Consider appropriate heat dissipation measures in the design to ensure normal operating temperature of the device. .
- The current of P-Channel MOSFET in the on state is negative, and it needs to be connected correctly according to the application conditions. .
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The above introduction is for reference only, and specific applications need to be adjusted according to actual design and usage.