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PHD78NQ03LT-VB, a N-channel TO252 MOSFET datasheet parameters video explanation
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Model: PHD78NQ03LT-VB.
Silk screen: VBE1307.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Maximum withstand voltage: 30V.
- Maximum continuous current: 60A.
- On-resistance (RDS(ON)): 10mΩ @ 10Vgs, 11mΩ @ 4.5Vgs.
- Threshold voltage (Vth): 1.6V.
- Package type: TO252.
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Application Introduction:.
PHD78NQ03LT-VB is a high-performance N-channel MOSFET (metal oxide semiconductor field effect transistor) with high current handling capability and low on-resistance, suitable for a variety of high power electronic applications. Here are some of its main application areas: .
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1. Power modules: The low on-resistance and high current handling capability of this MOSFET make it very suitable for use in power modules such as switching regulators and DC-DC converters to provide high efficiency and stable power output. .
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2. Motor drive: The PHD78NQ03LT-VB can be used in motor drive circuits such as motor control, electric vehicle motor drive, and motor control in industrial automation to achieve efficient motor operation. .
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3. Battery protection module: Due to its high current handling capability, it can also be used in battery protection modules to ensure the safety and performance of the battery during charging and discharging. .
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4. Power switch: This MOSFET can be used in power switches to control the on and off states of circuits, such as power switches in high-power electronic devices. .
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In summary, the PHD78NQ03LT-VB is a high-performance N-channel MOSFET suitable for a variety of high-power electronic applications, especially those that require high current handling capability and low resistance. It is widely used in power modules, motor drives, battery protection modules, power switches and other modules. .

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