Model: NTR4101PT1G-VB.
Silk screen: VB2290.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -20V.
- Rated current: -4A.
- On resistance (RDS(ON)): 57mΩ @ 4.5V, 83mΩ @ 2.5V.
- Gate-source threshold voltage range (Vth): -0.81V.
- Gate drive voltage range: ±12V.
- Package type: SOT23.
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Application Introduction:.
NTR4101PT1G-VB is a P-channel MOSFET suitable for a variety of low voltage and low power electronic applications. Here are some possible application areas and modules where this MOSFET may be widely used: .
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1. **Power Switch**: This MOSFET can be used in power management circuits in portable devices, low-power power supplies, and battery-powered devices. It can implement power switching, battery protection, and energy conversion. .
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2. **Low-Power Electronics**: The NTR4101PT1G-VB is suitable for electronic devices that require low-power operation, such as sensor nodes, embedded systems, and Internet of Things (IoT) devices. It helps reduce power consumption and extend battery life. .
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3. **Signal Switch**: In various signal switching applications, this MOSFET can be used as part of signal amplification and switching circuits to control signal transmission and processing. .
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4. **Charging Protection**: The NTR4101PT1G-VB can also be used in charging circuits to implement battery charging management and protection, ensuring a safe and efficient charging process. .
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5. **Driver and Switching Circuit**: This MOSFET can be used in driver and switching circuits such as motor drive, switch control, amplifier and signal processing. .
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In general, NTR4101PT1G-VB is a P-channel MOSFET suitable for low voltage and low power applications. It has a wide range of application potentials in many fields such as power management, low power electronics, signal switching, battery protection and drivers.