Model: NTF3055L108T1G-VB.
Silkscreen: VBJ1695.
Brand: VBsemi.
Parameters:.
- N-channel.
- Maximum withstand voltage: 60V.
- Maximum current: 4A.
- On-state resistance: 76mΩ @ 10V, 85mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage: 1.53V.
Package: SOT223.
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The NTF3055L108T1G-VB model is an N-channel MOSFET transistor suitable for a variety of applications. The following is a detailed parameter description and application introduction of the product:.
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**Detailed parameter description:**.
- Maximum withstand voltage: 60V, which means it can withstand a voltage of no more than 60 volts. .
- Maximum current: 4A, this MOSFET can withstand a current of up to 4 amperes. .
- On-state resistance: Under different voltages, its on-state resistance is 76 milliohms (@ 10V) and 85 milliohms (@ 4.5V). This shows that it has a relatively low resistance in the on state. .
- Threshold voltage: 1.53V, indicating that the MOSFET starts to turn on at this voltage. .
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**Application Introduction:**.
This MOSFET (NTF3055L108T1G-VB) is suitable for circuit modules in multiple fields, mainly used for current control, voltage switching and power amplification. Specific applications include but are not limited to the following fields:.
1. **Power management module:** Used for switching power supplies, voltage regulation circuits and power switches, which helps to achieve efficient energy management. .
2. **Drive module:** As a switch for motor drives or other electronic devices, it is used for current control and power management. .
3. **Power Inverter:** In the inverter, it can be used to convert DC to AC, suitable for solar inverters, electric vehicle chargers, etc. .
4. **LED Lighting Control:** Used to control the brightness and switching of LED lighting systems to achieve energy saving and brightness adjustment. .
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In short, NTF3055L108T1G-VB is a versatile N-channel MOSFET suitable for a variety of electronic applications, mainly used for current control and power management.