Model: NTD20N06LT4G-VB.
Silk screen: VBE1638.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 60V.
- Rated current: 45A.
- On-resistance: 24mΩ @ 10V, 28mΩ @ 4.5V.
- Silicon pole voltage: 20Vgs (±V).
- Gate voltage: 1.8Vth(V).
- Package type: TO252.
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Detailed parameter description:.
NTD20N06LT4G-VB is an N-channel MOSFET (metal oxide semiconductor field effect transistor) with silk screen VBE1638, produced by VBsemi. The device has the following main parameters: 1. High rated voltage (60V) and large rated current (45A), suitable for handling high-power circuits; 2. Low on-resistance, excellent conduction performance (24mΩ @ 10V, 28mΩ @ 4.5V), which can reduce power loss; 3. 20V silicon pole voltage (20Vgs) and 1.8V gate voltage (1.8Vth(V)), providing flexible driving and control capabilities; 4. The package is TO252, which is easy to weld and install. .
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Application Introduction: .
NTD20N06LT4G-VB MOSFET is commonly used in the following modules: .
- Power module: Due to its high rated voltage and large rated current, it can be widely used in power modules for stabilizing and distributing current; .
- Motor drive: The low on-resistance and high power characteristics of the device make it an ideal choice for motor drive modules, which can provide high efficiency and high output power; .
- Electronic equipment: Due to its flexible driving and control capabilities, NTD20N06LT4G-VB can be used in a variety of electronic devices, such as switching power supplies, inverters, photovoltaic power generation systems, etc. .
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In short, NTD20N06LT4G-VB-VBE1638 is an N-channel MOSFET device with high rated voltage and large rated current, suitable for a variety of modules that require high power performance and flexible control.