Model: NIF9N05CLT1G-VB.
Silk screen: VBJ1695.
Brand: VBsemi.
Package: SOT223.
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**Detailed parameter description:**.
- Architecture: N -Channel MOSFET.
- Voltage level: 60V.
- Current capability: 4A.
- RDS(ON): 76mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth) : 1.53V.
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**Application introduction:**.
NIF9N05CLT1G-VB is an N-Channel MOSFET in SOT223 package, suitable for circuit design in various fields. The following are the possible application fields and modules of this device: .
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1. **Power module:** Suitable for small power modules, capable of providing efficient power switching and voltage regulation. .
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2. **Battery Management:** Can be used for battery charge and discharge management module, supporting medium current capacity and relatively low threshold voltage. .
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3. **LED Lighting:** Suitable for LED lighting drive circuits, with moderate current capability and low on-resistance, helping to achieve efficient LED lighting systems. .
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4. **Power switch:** As an N-Channel MOSFET, it can be used for power switches to control the on and off of the circuit and improve the efficiency and response speed of the circuit. .
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**Usage Precautions:**.
- When designing a circuit, make sure to understand and follow the maximum rated voltage and current of the device to prevent damage to the device. .
- Pay attention to proper heat dissipation measures, especially in high current applications, to ensure that the device is within the normal operating temperature range.