According to the model and parameters provided, the following are the detailed parameters and application introduction of the MOSFET model NDT3055-VB: .
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**Model: ** NDT3055-VB.
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** Silk screen: ** VBJ1695.
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** Brand: ** VBsemi.
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**Parameters: **.
- Channel type: N channel.
- Rated voltage: 60V.
- Maximum current: 4A.
- Static drain-source resistance (RDS(ON)): 76mΩ @ 10V, 85mΩ @ 4.5V.
- Gate-source voltage threshold (Vth): 1.53V.
- Standard gate-source voltage (±V): 20V.
- Package: SOT223.
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**Product application introduction:**.
NDT3055 -VB is an N-channel MOSFET suitable for power switching and amplifier applications in low to medium power electronic devices and modules. This MOSFET has a moderate voltage rating and low drain-source resistance, making it suitable for a variety of applications. .
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**Product application areas:**.
1. **Power switch:** This type of MOSFET can be used in power switching applications to switch power connections in circuits, such as power management unit and power switch. .
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2. **Motor Drive:** Suitable for low to medium power motor drive circuits, such as small DC motors and stepper motors, to provide motor control and power amplification. .
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3. **Battery Protection:** Can be used in battery protection circuits to control the charging and discharging of the battery to ensure the safety and performance of the battery. .
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4. **Small inverter and power inverter:** Used to convert DC power to AC power, suitable for small inverters and power inverters, such as home emergency power supply system. .
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5. **Signal Amplifier:** Suitable for applications that amplify low to medium power signals, such as audio amplifiers and signal amplifiers in communication equipment. .
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In summary, NDT3055-VB MOSFET is widely used in many fields for power control, current switching and signal amplification purposes. Due to its performance parameters, it plays a key role in electronic modules and devices.