Model: NCE0103M-VB.
Silk screen: VBI1101M.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 100V.
- Maximum continuous current: 3.1A.
- Static on resistance (RDS(ON)): 126mΩ @ 10V, 139mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Threshold voltage (Vth): 1.7V.
- Package type: SOT89-3.
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Application Introduction:.
NCE0103M-VB is an N-channel MOSFET suitable for electronic applications requiring high performance power switching. Here are some possible application areas for the modules: .
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1. **Power switch module**: This MOSFET can be used in power switch modules to achieve efficient switching and regulation of power. It is suitable for portable devices, power management systems, and low-voltage power applications. .
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2. **Battery protection module**: In applications where the battery needs to be protected from over-discharge and over-charge, the NCE0103M-VB can be used in battery protection circuits to ensure safe operation of the battery. .
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3. **DC-DC converter**: In DC-DC converters that require high efficiency, this MOSFET can be used to help achieve voltage step-up and step-down and power conversion. It is suitable for portable devices, communication equipment, and industrial applications. .
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4. **Motor drive module**: The NCE0103M-VB can be used in motor drive and control modules, including DC motors, stepper motors, and brushless DC motor drives. .
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5. **Current control module**: In applications that require high-performance current control, this MOSFET can be used in current sensor and current amplifier modules. .
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NCE0103M-VB has N-channel and is suitable for applications that require N-channel MOSFET to achieve high-performance power switching. In actual applications, be sure to comply with the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.