Model: MTD6P10ET4.
Silk screen: VBE2102M.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -100V.
- Rated current: -10A.
- RDS(ON): 188mΩ @ 10V, 195mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: -1.77V.
- Package type: TO252.
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Application Introduction:.
MTD6P10ET4 (silk screen: VBE2102M) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
MTD6P10ET4 is a high-voltage, high-current carrying capacity P-channel power MOSFET. The main parameters include rated voltage of -100V, rated current of -10A, RDS(ON) of 188mΩ @ 10V, 195mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of -1.77V, and package type of TO252. .
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Application areas: .
MTD6P10ET4 (VBE2102M) is suitable for a variety of fields and application scenarios, especially for high-voltage, high-current circuits that require P-channel power MOSFETs. The following are some typical application areas: .
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1. Power management module: MTD6P10ET4 can be used in power management modules to provide efficient power conversion and stable current output, improving system power consumption and efficiency. .
2. High voltage battery system: It can be applied to the charge and discharge control circuit in the high voltage battery system, providing high power and high efficiency power conversion and battery management. .
3. Electric vehicle charging pile: MTD6P10ET4 is suitable for the switch circuit in the electric vehicle charging pile to achieve high efficiency power conversion and stable current control. .
4. Industrial control system and communication equipment: MTD6P10ET4 is suitable for power management and current control in industrial control system and communication equipment, providing reliable power consumption control and current output. .
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In summary, MTD6P10ET4 (VBE2102M) is a P-channel power MOSFET suitable for power management modules, high voltage battery systems, electric vehicle charging piles, industrial control systems and communication equipment modules. It has high voltage and high current carrying capacity, suitable for circuits that require high power and high efficiency.