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MTD3055VLT4G-VB, a N-channel TO252 MOSFET datasheet parameters video explanation
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**VBsemi MTD3055VLT4G-VB product detailed parameter description and application introduction**.
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**Parameter description:**.
- **Model:** MTD3055VLT4G-VB.
- * *Silk screen:** VBE1695.
- **Brand:** VBsemi.
- **Package:** TO252.
- **Channel type:** N—Channel channel.
- **Operating voltage:** 60V.
- **Maximum current:** 18A.
- **On resistance:** RDS(ON)=73mΩ@VGS=10V, VGS=20V .
- **Threshold voltage:** Vth=2V.
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**Application introduction:**.
VBsemi’s MTD3055VLT4G-VB is a TO252 packaged N-channel field effect transistor , suitable for low to medium power electronic applications. This device has a wide range of applications in power management, switching power supplies, motor control and other fields. .
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**Main application areas and modules:**.
1. **Switching power supply module:** MTD3055VLT4G-VB can be used in switching power supply module as a power switching device to achieve efficient power supply Switch control. .
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2. **Motor control module:** It is suitable for small and medium power motor control modules and can provide reliable current support in motor driving. .
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3. **Power inverter:** In small and medium power inverter circuits, MTD3055VLT4G-VB can be used to convert DC to AC and is a key component in the inverter. .
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**Function:**.
- **Current control:** MTD3055VLT4G-VB can be used as a key component of current control. By adjusting its on-resistance, the current in the circuit can be controlled. control. .
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- **Power adjustment:** It is suitable for power electronic modules of small and medium power. It can be used to adjust the power in the circuit to meet the needs of different application scenarios. .
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**Usage Precautions:**.
1. **Thermal Design:** In high-power applications, the heat dissipation system needs to be properly designed to ensure that the device operates within an appropriate temperature range. , to maintain its performance and longevity. .
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2. **Voltage and current limits:** Pay attention to the maximum operating voltage and current of the device, and do not exceed the specified parameter range to prevent damage to the device. .
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3. **Anti-static measures:** During transportation and use, please take anti-static measures to avoid the impact of static electricity on the device. .
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4. **Reference data sheet:** When designing a circuit, please read the device data sheet carefully and ensure that it is designed and used in accordance with the recommendations provided by the manufacturer. .
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In summary, MTD3055VLT4G-VB is an N-channel field effect transistor suitable for low and medium power electronic applications. It is widely used in switching power supply modules, motor control modules, power inverters and other fields. . When using, please follow the relevant usage precautions to ensure the reliability and performance of the device in various application scenarios.

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