Model: MTD20N03HDLT4G-VB .
Silkscreen: VBE1310 .
Brand: VBsemi .
Parameter Description: .
- N-channel.
- Rated voltage: 30V.
- Rated current: 70A.
- On resistance: 7mΩ @ 10V, 9mΩ @ 4.5V.
- Gate-source voltage: ±20Vgs .
- Threshold voltage: 1.8Vth(V).
- Package: TO252 .
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Application Introduction: .
MTD20N03HDLT4G-VB is a high-performance N-channel power MOSFET. It is suitable for use in various field modules that require high-power switching and control. Due to its rated voltage of up to 30V and rated current of 70A, it can perform well in various high-power applications. .
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Application fields: .
This type of MOSFET is commonly used in the following modules: .
- Power management module: Due to its high current and low on-resistance, it is suitable for switching and regulating circuits in power management modules. .
- Power tools: Suitable for power switching and current control circuits in power tools, such as electric drills, grinders, etc. .
- Electric vehicles: In the battery management system of electric vehicles, it can be used for current control and protection circuits. .
- LED lighting: Used in switching and dimming circuits in LED lamps to achieve high brightness and energy saving. .
- Speed regulators and drivers: Can be used for high-power switching circuits in speed regulators and driver modules. .
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Summary: .
MTD20N03HDLT4G-VB is an N-channel power MOSFET suitable for various high-power applications. Its features include high rated current and low on-resistance, enabling it to perform well in modules in a variety of fields, such as power management, power tools, electric vehicles, LED lighting, speed regulators and drives. .