MTB1D7N03E3-VB, a N-channel TO220 MOSFET datasheet parameters video explanation

Model: MTB1D7N03E3.
Silk screen: VBM1302.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Rated voltage: 30V.
- Rated current : 180A.
- RDS(ON): 2mΩ @ 10V, 2.8mΩ @ 4.5V.
- Gate-source voltage range: 20V.
- Gate-source threshold voltage: 1.7V.
- Package Type: TO220.
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Application introduction: .
MTB1D7N03E3 (silk screen: VBM1302) is an N-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
MTB1D7N03E3 is an N-channel power MOSFET with high voltage and high current carrying capabilities. The main parameters include rated voltage of 30V, rated current of 180A, RDS(ON) of 2mΩ @ 10V, 2.8mΩ @ 4.5V, gate-source voltage range of 20V, gate-source threshold voltage of 1.7V, and package type TO220. .
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Application fields: .
MTB1D7N03E3 (VBM1302) is suitable for a variety of fields and application scenarios, and is mainly used in circuits that require the high voltage and high current carrying capabilities of N-channel power MOSFETs. The following are some typical application areas: .
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1. Power management module: MTB1D7N03E3 can be used in the power management module to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Motor drive: It can be used in motor drive circuits to provide high-power and high-efficiency power output, and is suitable for motor drives in industrial automation and mechanical equipment. .
3. Automotive electronic systems: MTB1D7N03E3 is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the high voltage and high power requirements of automotive electronic systems. .
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In summary, MTB1D7N03E3 (VBM1302) is an N-channel power MOSFET, suitable for modules in the fields of power management modules, motor drives, and automotive electronic systems. It has high voltage and high current carrying capabilities and is suitable for circuits requiring high power and high efficiency.