Model: MGSF2N02ELT1G-VB.
Silkscreen: VB1240.
Brand: VBsemi.
Parameter Description:.
- MOSFET type: N-channel.
- Rated voltage: 20V.
- Maximum current: 6A.
- On-resistance (RDS(ON)): 24mΩ @ 4.5V, 33mΩ @ 2.5V, 8Vgs.
- Threshold voltage range (Vth): 0.45V to 1V.
- Package: SOT23.
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Application Introduction:.
MGSF2N02ELT1G-VB is an N-channel MOSFET suitable for a variety of electronic devices and circuits. It has a wide range of applications in modules in some specific fields. .
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**Application fields and module description:**.
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1. **Power module**:.
- Due to its low on-resistance and moderate current handling capability, MGSF2N02ELT1G-VB is suitable for small power modules. .
- It can be used in portable electronic devices, battery charging management modules, low-power power supplies and other fields to provide efficient power conversion. .
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2. **Switching circuit**:.
- This MOSFET can be used in various switching circuits such as switching dimming, switching power supply, PWM control, etc. .
- It is used to achieve efficient switching control in lighting, communication equipment, power inverter and other fields. .
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3. **Signal amplification module**:.
- The low threshold voltage range of MGSF2N02ELT1G-VB makes it suitable for signal amplification and conditioning modules. .
- It is used for signal processing and amplification in audio amplifiers, signal processing circuits, sensor interfaces and other fields. .
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4. **Portable Electronic Devices**: .
- Due to its small package and low power consumption, this MOSFET is suitable for portable electronic devices. .
- It can be used in smart phones, tablets, portable audio devices and other fields for efficient power management. .
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5. **Battery Management Module**: .
- In battery management modules that require low power consumption and efficient energy management, this MOSFET can be used for battery charging and discharging control. .
- Used in portable electronic devices, solar chargers, portable power banks and other fields to provide reliable battery management. .
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In summary, the MGSF2N02ELT1G-VB is a versatile N-channel MOSFET that is suitable for modules in a variety of fields, including power supplies, switching circuits, signal amplification, portable electronic devices and battery management. Its low on-resistance, low threshold voltage, small package and high performance make it a key component of various electronic devices and systems, helping to improve efficiency and performance.