Model: MEM2310XG.
Silk screen: VB1330.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Rated voltage: 30V.
- Rated current : 6.5A.
- RDS(ON): 30mΩ @ 10V, 33mΩ @ 4.5V.
- Gate-source voltage range: 20V.
- Gate-source threshold voltage range: 1.2V~2.2V.
- Package type: SOT23.
.
Application introduction: .
MEM2310XG (silk screen: VB1330) is an N-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
.
Detailed parameter description: .
MEM2310XG is an N-channel power MOSFET, suitable for a variety of fields and application scenarios. The main parameters include rated voltage of 30V, rated current of 6.5A, RDS(ON) of 30mΩ @ 10V, 33mΩ @ 4.5V, gate-source voltage range of 20V, gate-source threshold voltage range of 1.2V~2.2V, and package type: SOT23. .
.
Application fields: .
MEM2310XG (VB1330) is suitable for a variety of fields and application scenarios, and is mainly used for circuit design requiring N-channel power MOSFET. The following are some typical application areas: .
.
1. Power management module: MEM2310XG can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Inverters and converters: It is suitable for the design of switching circuits in inverters and converters, providing reliable current control and power conversion. .
3. LED driver: MEM2310XG is also suitable for LED driver circuits, providing stable current control and high-efficiency power conversion. .
.
In summary, MEM2310XG (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, inverters and converters, and LED drivers. It has low on-resistance and high reliability, making it suitable for circuits requiring high efficiency and current control.