Model: ME2323D-VB.
Silkscreen: VB2290.
Brand: VBsemi.
Parameters:.
- P-channel.
- Rated voltage: -20V.
- Maximum current: -4A.
- On-resistance (RDS(ON)): 57mΩ @ 4.5V, 83mΩ @ 2.5V, 12Vgs (±V).
- Threshold voltage (Vth): -0.81V.
- Package: SOT23.
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Application Introduction:.
ME2323D-VB is a P-channel MOSFET suitable for applications requiring low on-resistance and low voltage. This MOSFET can be used for power switching, battery protection, signal amplification and other circuits requiring P-channel MOSFET. .
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Main features and application areas: .
1. **Power switch**: ME2323D-VB can be used for power switch applications, especially for low voltage power supplies such as battery-powered devices. .
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2. **Battery protection**: In battery management systems, this MOSFET can be used for battery charge and discharge control and protection to ensure the safe operation of the battery pack. .
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3. **Signal amplification**: Due to its low threshold voltage and low on-resistance, ME2323D-VB is suitable for signal amplification and switching applications such as amplifier circuits and signal switching. .
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4. **Low voltage application**: The low voltage and low on-resistance characteristics of this MOSFET make it suitable for low voltage circuit design. .
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In short, ME2323D-VB is suitable for multiple fields, including modules such as power switch, battery protection, signal amplification and low voltage applications. Its P-channel characteristics and low voltage characteristics make it an ideal choice for handling low voltage applications, and it can also be used in various circuit designs that require P-channel MOSFETs.