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IRLI530NPBF-VB, a N-channel TO220F MOSFET datasheet parameters video explanation
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Model: IRLI530NPBF-VB.
Silk screen: VBMB1101M.
Brand: VBsemi.
Parameter Description:.
- MOSFET type: N-channel.
- Rated voltage: 100V.
- Maximum current: 18A.
- On-resistance (RDS(ON)): 100mΩ @ 10V, 120mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth): 2~4V.
- Package: TO220F.
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Application Introduction:.
IRLI530NPBF-VB is an N-channel MOSFET suitable for a variety of electronic devices and circuits, especially for power switching and power management applications requiring high voltage and high current. .
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**Application fields and module description:**.
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1. **Power switch module**:.
- Due to the high voltage and high current handling capability of its N-channel MOSFET, IRLI530NPBF-VB is suitable for power switch modules and can be used to control high voltage and high current loads. .
- Widely used in power switches, power inverters, and high power switching circuits. .
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2. **Power management module**:.
- The device can be used in power management modules to achieve power control and management of circuits. .
- Used for efficient energy management in power supply modules, battery charge and discharge management, and high power DC-DC converters. .
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3. **Motor control module**:.
- The characteristics of IRLI530NPBF-VB make it suitable for motor control applications and can be used for motor drive and control. .
- Used for motor control and drive in industrial automation, robotics, and electric vehicles. .
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4. **Power Inverter Module**: .
- This device can be used in power inverter modules to convert DC power to AC power. .
- Used for power inverter and control in solar inverters, variable frequency air conditioners, power electronic devices. .
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In summary, IRLI530NPBF-VB is an N-channel MOSFET device suitable for a variety of high voltage, high current electronic devices and circuits. Its characteristics make it a key component in power switching, power management, motor control and power inverter modules, helping to achieve reliability and efficiency of high power circuits.

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