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IRLB8721PBF-VB, a N-channel TO220 MOSFET datasheet parameters video explanation
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Model: IRLB8721PBF-VB.
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Silk screen: VBM1303.
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Brand: VBsemi.
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### Detailed parameter description: .
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- **Package type:** TO220.
- **Channel type:** N-Channel.
- **Rated voltage (VDS):** 30V.
- **Maximum continuous Current (ID):** 120A.
- **On-resistance (RDS(ON)):**.
- @ VGS = 10V: 3mΩ.
- @ VGS = 20V: Not provided Specific value.
- **Threshold voltage (Vth):** 1.7V.
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### Application introduction: .
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IRLB8721PBF-VB is a TO220 package N-Channel field effect transistor. Due to its high current and low on-resistance characteristics, it is suitable for high-power power supply and switching applications. .
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### Applicable fields and modules: .
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1. **Power switch module:** Due to its high current and low on-resistance, IRLB8721PBF-VB can be used in designs High-power power switch modules, such as server power supplies, welding equipment, etc. .
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2. **Motor Control:** In motor control applications requiring high current, such as industrial motor control systems. .
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3. **Electric vehicle power system:** Suitable for the power system of electric vehicles, such as electric vehicle battery management system (BMS). .
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### Precautions for use: .
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1. **Voltage level:** During use, make sure not to exceed the rated voltage of 30V. .
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2. **Current limit:** Do not exceed the specified maximum continuous current, which is 120A. .
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3. **Threshold voltage:** Note that the threshold voltage is 1.7V, and the appropriate voltage range needs to be considered when designing the circuit. .
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4. **Heat Dissipation:** Due to its high power characteristics, it may be necessary to provide adequate heat dissipation to ensure normal operating temperature of the transistor. .
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5. **Electrostatic protection:** During operation, take appropriate electrostatic protection measures to prevent damage to the transistor. .
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Please note that this is just a basic overview and specific design and application need to be based on specific project needs and manufacturer's recommendations. Before using this device, be sure to consult the associated data sheet and technical documentation for detailed information and guidance.

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