Model: IRFU220NPBF-VB.
Silk screen: VBFB1203M.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 200V.
- Maximum continuous drain current: 10A.
- Static drain-source resistance (RDS(ON)): 270mΩ @ 10V, 320mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): 3V.
- Package: TO251.
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Application introduction: .
IRFU220NPBF-VB is an N Channel field effect transistor (MOSFET) device with high voltage capability and drain-source resistance suitable for high voltage applications. This makes it useful in a variety of high-voltage electronic applications. .
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Application fields: .
1. **Power module**: IRFU220NPBF-VB is suitable for high-voltage power management modules, such as industrial power supplies, power switches and power inverters, capable of providing high efficiency of electrical energy conversion. .
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2. **Motor Drive**: The high voltage capability and moderate current capability of this MOSFET device make it ideal for use in high voltage motor drives, motor control and motor protection, and can be used Industrial motors and automotive motors and other fields. .
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3. **Power switch**: IRFU220NPBF-VB can be used in high-voltage and high-current switching circuits, such as high-voltage switching power supplies and power switches. .
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4. **Industrial Automation**: In industrial automation systems, this MOSFET device can be used for power management, drive circuits and power distribution. .
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5. **Electric vehicle charger**: In electric vehicle chargers, IRFU220NPBF-VB can be used for high-voltage and high-current power switches to ensure the efficiency and safety of the charging process. .
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In short, IRFU220NPBF-VB is a versatile electronic device suitable for various high-voltage electronic applications that require high voltage, high current capability, low resistance and reliability. It can be used in modules such as power management, motor control, power switches, industrial automation and electric vehicle chargers.