IRFR120NTRPBF (VBE1101M) parameter description: N-channel, 100V, 18A, on-resistance 115mΩ@10V, 121mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage 1.6V, package: TO252. . Application introduction: IRFR120NTRPBF is suitable for high-power N-channel MOSFET, which is commonly found in modules such as power switches, motor control and inverters. . Its larger current carrying capacity enables it to perform well in high-current demand scenarios. . Advantages and applicable fields: Suitable for high-power applications such as power switches, motor control and inverter modules. . Larger current carrying capacity meets high current requirements. .
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