Model: IRF830A.
Silkscreen: VBM16R08.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 600V.
- Rated current: 8A.
- RDS(ON): 780mΩ @ 10V, 1070mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: 3V.
- Package type: TO220.
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Application introduction:.
IRF830A (silkscreen: VBM16R08) is an N-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction:.
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Detailed parameter description:.
IRF830A is an N-channel power MOSFET with high rated voltage and current carrying capability. The main parameters include rated voltage of 600V, rated current of 8A, RDS(ON) of 780mΩ @ 10V, 1070mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of 3V, and package type of TO220. .
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Application fields: .
IRF830A (VBM16R08) is suitable for a variety of fields and application scenarios, mainly used in circuits requiring N-channel power MOSFETs. The following are some typical application fields: .
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1. Power management module: IRF830A can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Motor drive: It can be used in motor drive circuits to provide high power and high-efficiency power output, suitable for motor drive in industrial automation and mechanical equipment. .
3. High-voltage power supply system: IRF830A is suitable for high-voltage power supply systems that require high rated voltage and current carrying capacity, such as high-voltage DC/DC converters and high-voltage inverters. .
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In summary, IRF830A (VBM16R08) is an N-channel power MOSFET suitable for modules in the fields of power management modules, motor drives, and high-voltage power supply systems. It has high rated voltage and current carrying capacity, suitable for circuits that require high power and high efficiency.