Model: IRF7425TRPBF-VB. Silk screen: VBA2309. Brand: VBsemi. . **Parameter Description:**. - Polarity: P-channel. - Rated voltage (Vds): -30V. - Rated current (Id): -11A. - Static on-resistance (RDS(ON)): 11mΩ @ 10V, 15mΩ @ 4.5V. - Gate-source voltage (Vgs): -20V to 20V. - Threshold voltage (Vth): -1.5V. - Package type: SOP8. . **Application Introduction:**. IRF7425TRPBF-VB is a P-channel power MOSFET suitable for a variety of applications. Here are some of the modules where this product may be applied: . . 1. **Power supply modules:** Due to its low on-resistance and high current carrying capability, the IRF7425TRPBF-VB can be used to design high-efficiency switching power supply modules such as DC-DC converters and AC-DC converters. These modules are commonly found in computer power supplies, communication equipment, and industrial power applications. . . 2. **Motor drivers:** Due to its high current carrying and low on-resistance, the IRF7425TRPBF-VB can be used in motor driver modules such as DC motor controllers and stepper motor drivers. These modules play a key role in automation, robotics, and electric vehicles. . . 3. **LED lighting:** This MOSFET can also be applied to LED lighting modules to control the current in the LED drive circuit. This is critical for energy saving and brightness adjustment in the lighting industry. . . 4. **Battery Management:** In battery management modules, the IRF7425TRPBF-VB can be used to implement battery charging and discharging control. This is very important for mobile devices, electric vehicles, and solar energy storage systems. . . 5. **Automotive Electronics:** In the field of automotive electronics, this MOSFET can be used in applications such as braking systems, electric vehicle charging piles, and electric power steering systems. . . In short, the IRF7425TRPBF-VB is a powerful and versatile P-channel MOSFET suitable for module design in many different fields, including power supply, motor control, lighting, battery management, and automotive electronics. Its low on-resistance and high current carrying capacity make it excel in high-performance and energy-efficient electronic devices. .
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