Model: IRF7303TRPBF-VB.
Silk screen: VBA3328.
Brand: VBsemi.
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Detailed parameter description:.
- Type: dual N-channel MOSFET.
- Rated operating voltage: 30V.
- Rated drain current: 6.8A (2 N-channels in parallel).
- On resistance RDS(ON): 22mΩ @ 10V, 26mΩ @ 4.5V.
- Threshold voltage Vth: 1.73V.
- Package: SOP8.
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Application introduction:.
IRF7303TRPBF-VB is a high-performance dual N-channel field effect transistor (MOSFET), widely used in various electronic devices and modules. .
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This MOSFET is suitable for the application of modules in the following fields: .
1. Power module: IRF7303TRPBF-VB can be used in the design of power switch, voltage regulation and current regulation module. Its low on-resistance and high rated drain current enable it to provide higher efficiency and stability in power modules. .
2. Automotive electronic module: Due to the high performance and adaptability of rated voltage and power range of IRF7303TRPBF-VB, it can be used in the design of functional circuits such as drive motors, lighting systems and electronic auxiliary modules in automotive electronic modules. .
3. Industrial control module: This transistor can be used in the design of industrial control modules such as PLC, industrial robots, sensor control and high-voltage switches. Its high reliability and adaptability enable it to work stably in various industrial environments. .
4. Electronic equipment module: IRF7303TRPBF-VB can be used in the design of various electronic equipment modules, such as power management, inverters, photoelectric sensors and wireless communication modules. Its reliable performance and high efficiency make it widely used in these modules. .
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Summary: IRF7303TRPBF-VB is a high-performance dual N-channel MOSFET suitable for power modules, automotive electronic modules, industrial control modules and electronic equipment modules. Its low on-resistance, high rated drain current and adaptability enable it to provide high efficiency and stability performance in various modules. .