Model: IRF530NPBF.
Silk screen: VBM1101M.
Brand: VBsemi.
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Parameter description:.
- MOSFET type: N channel.
- Rated voltage (VDS): 100V .
- Rated current (ID): 18A .
- Turn-on resistance (RDS(ON)): 127mΩ@10V, 132mΩ@4.5V .
- Threshold voltage (Vth): 2~4V.
- Package type: TO220.
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Application introduction:.
This IRF530NPBF MOSFET is a high voltage N-channel MOSFET, suitable for high voltage applications. It has a higher rated voltage and larger current carrying capacity, making it suitable for high-power switching and power conversion applications. .
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This MOSFET can be widely used in modules in the following fields: .
- Power management module: suitable for high-power power modules such as high-voltage switching power supplies, DC-DC converters, and inverters. .
- High-power motor control module: used for high-voltage and high-power DC motor drive, stepper motor drive and other motor control modules. .
- High-voltage lighting module: Suitable for high-voltage and high-power lighting drive and control modules. .
- High-voltage industrial control module: Power switch and control module suitable for high-voltage industrial control systems. .
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In short, IRF530NPBF MOSFET is suitable for various application scenarios that require high-voltage and high-power N-channel MOSFETs. It provides stable and reliable high-current control and power conversion functions, and is especially suitable for modules in high-voltage and high-power applications. .