Model: IPD048N06L3G-VB.
.
Silk screen: VBE1606.
.
Brand: VBsemi.
.
### Detailed parameter description: .
.
- **Package type:** TO252.
- **Channel type:** N-Channel.
- **Rated voltage (VDS):** 60V.
- **Maximum continuous Current (ID):** 110A.
- **On-resistance (RDS(ON)):**.
- @ VGS = 10V: 4.5mΩ.
- @ VGS = 20V: Not Provide specific values.
- **Threshold voltage (Vth):** 2.8V.
.
### Application introduction: .
.
IPD048N06L3G-VB is a TO252 package N-Channel field effect transistor. Due to its high rated voltage and current capabilities, it is suitable for high power power supply and switching applications. .
.
### Applicable fields and modules: .
.
1. **Power module:** Due to its high current and low on-resistance, IPD048N06L3G-VB can be used to design high Power supply modules, such as server power supplies and industrial control power supplies. .
.
2. **Motor Drive:** In motor drive applications requiring high current, such as industrial motor control systems. .
.
3. **Electric vehicle power system:** Due to its high voltage and current capabilities, it can be used in the power system of electric vehicles, such as electric vehicle battery management system (BMS). .
.
### Precautions for use: .
.
1. **Voltage level:** During use, make sure not to exceed the rated voltage 60V. .
.
2. **Current limit:** Do not exceed the specified maximum continuous current, which is 110A. .
.
3. **Threshold voltage:** Note that the threshold voltage is 2.8V, and the appropriate voltage range needs to be considered when designing the circuit. .
.
4. **Heat dissipation:** For high power applications, provide sufficient heat dissipation to ensure the normal operating temperature of the transistor. .
.
5. **Electrostatic protection:** During operation, take appropriate electrostatic protection measures to prevent damage to the transistor. .
.
Please note that this is just a basic overview and specific design and application need to be based on specific project needs and manufacturer's recommendations. Before using this device, be sure to consult the associated data sheet and technical documentation for detailed information and guidance.