Model: IPD036N04L-VB.
Silk screen: VBE1405.
Brand: VBsemi.
Parameters:.
- N channel.
- Rated voltage: 40V.
- Maximum current: 85A.
- On-state resistance (RDS(ON)): 4mΩ @ 10V, 5mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1.85V.
- Package: TO252.
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Application Introduction: .
IPD036N04L-VB is a high-performance N-channel MOSFET suitable for high-power applications requiring high current handling capability and low on-state resistance. This MOSFET can be used in power switching, motor control, battery protection and other circuits requiring high performance. .
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Main features and application areas: .
1. **Power switch**: IPD036N04L-VB can be used in power switching applications, such as switching power supplies, DC-DC converters and switching regulators . Its high current handling capability and low on-state resistance make it suitable for high power supplies. .
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2. **Motor Control**: In motor driver and control systems, this MOSFET can be used for motor control, such as DC motors, stepper motors and electric vehicle motor control. .
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3. **Battery Protection**: In the battery management system, IPD036N04L-VB can be used for battery charge and discharge control, protection and balance to ensure the safe operation of the battery pack. .
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4. **High Power Applications**: Due to its high current handling capability and low on-state resistance, this MOSFET is suitable for circuit designs that require high performance and high power. .
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5. **Current Switch**: This MOSFET can be used in current switching applications such as current limiting and protection circuits. .
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In short, IPD036N04L-VB is suitable for many fields, including modules such as power switches, motor control, battery protection, high-power applications and current switches. Its N-channel characteristics and high current handling capabilities make it ideal for handling high-current and high-power applications, and can also be used in a variety of circuit designs that require high-performance N-channel MOSFETs.