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HM3401PR-VB, a P-channel SOT89 MOSFET datasheet parameters video explanation
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Model: HM3401PR.
Silkscreen: VBI2338.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -30V.
- Rated current: -5.8A.
- RDS(ON): 50mΩ @ 10V, 56mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage range: -0.6V~-2V.
- Package type: SOT89-3.
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Application Introduction:.
HM3401PR (silkscreen: VBI2338) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
HM3401PR is a P-channel power MOSFET with low conductance voltage drop and high current carrying capacity. The main parameters include rated voltage of -30V, rated current of -5.8A, RDS(ON) of 50mΩ @ 10V, 56mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage range of -0.6V~-2V, and package type of SOT89-3. .
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Application field: .
HM3401PR (VBI2338) is suitable for a variety of fields and application scenarios, mainly used in circuits that require P-channel power MOSFET. The following are some typical application fields: .
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1. Power management module: HM3401PR can be used in power management modules to provide efficient power conversion and stable current output, and improve the power consumption and efficiency of the system. .
2. Power tools and household appliances: It can be applied to motor drive circuits in power tools and household appliances to provide efficient and reliable power output. .
3. Battery management system: HM3401PR can be used in charge and discharge control circuits in battery management systems to provide efficient and reliable battery management. .
4. LED lighting: In LED lighting systems, HM3401PR can be used as a switching element in the drive circuit to achieve efficient power conversion and precise control of LED lights. .
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In summary, HM3401PR (VBI2338) is a P-channel power MOSFET suitable for power management modules, power tools, household appliances, battery management systems, and LED lighting modules. It has low conductance voltage drop and high current carrying capacity, suitable for circuits that require high energy efficiency and reliability.

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