Model: HFD4N50-VB.
Silkscreen: VBE165R04.
Brand: VBsemi.
Parameters:.
- N-channel.
- Rated voltage: 650V.
- Maximum current: 4A.
- On-resistance (RDS(ON)): 2200mΩ @ 10V, 2750mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 3.5V.
- Package: TO252.
.
Application Introduction:.
HFD4N50-VB is an N-channel MOSFET with high rated voltage and medium current handling capability for high voltage and high efficiency applications. This MOSFET can be used for power switching, motor control, battery protection and other circuits requiring high performance. .
.
Main features and application areas: .
1. **Power switch**: HFD4N50-VB can be used in power switching applications such as switching power supplies, DC-DC converters, and switching regulators. Its high rated voltage and moderate current handling capability make it suitable for high voltage power supplies. .
.
2. **Motor control**: In motor drives and control systems, this MOSFET can be used for motor control, such as DC motors, stepper motors, and electric vehicle motor control. .
.
3. **Battery protection**: In battery management systems, HFD4N50-VB can be used for battery charge and discharge control, protection, and balancing to ensure safe operation of battery packs. .
.
4. **High voltage applications**: Due to its high rated voltage, this MOSFET is suitable for circuit designs that require high performance and high voltage. .
.
5. **Current switch**: This MOSFET can be used for current switching applications, such as current limiting and protection circuits. .
.
In short, HFD4N50-VB is suitable for multiple fields, including power switching, motor control, battery protection, high voltage applications and current switching modules. Its N-channel characteristics and high rated voltage make it an ideal choice for handling high voltage applications, and it can also be used in various circuit designs that require high-performance N-channel MOSFETs.