Model: HAT2016RJ-VB.
Silk screen: VBA3328.
Brand: VBsemi.
Parameters:.
- Channel type: N channel.
- Rated voltage: 30V.
- Maximum current: 6.8A (one channel), 6.0A (another channel).
- Static on-resistance (RDS(ON)): 22mΩ @ 10V.
- Static on-resistance (RDS( ON)): 26mΩ @ 4.5V.
- Gate-source voltage (Vgs): ±20V.
- Threshold voltage (Vth): 1.73V.
- Package: SOP8.
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Application Introduction:.
HAT2016RJ-VB is a dual-channel N-channel field effect transistor (FET), suitable for a variety of electronic equipment and application fields, with the following main applications:.
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1. **Power Switch:** The dual-channel design of the HAT2016RJ-VB makes it ideal for use as a power switch for controlling the flow of current in a circuit. Two different circuits can be controlled separately. .
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2. **Electronic switch:** Suitable for various electronic switch applications, such as switching power supply, power distribution unit, power management module, etc. .
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3. **Current Control:** Can be used in current control circuits such as current limiters and current sources. .
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4. **Power Management:** In the power management module, HAT2016RJ-VB can help control the switching of the power supply and stabilize the output voltage. .
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5. **Load switching:** Can be used in load switchers to help control the connection and disconnection of loads. .
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6. **Battery Protection:** In the lithium battery protection circuit, HAT2016RJ-VB can be used to realize the charging and discharging control of the battery to ensure the safe operation of the battery. .
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These application fields cover various electronic devices and modules. The dual-channel design of HAT2016RJ-VB makes it an important component for controlling current and voltage, especially when two circuits need to be controlled separately. . Its high performance and integrated design help simplify circuit design and reduce package size.