Model: FTU36N06N-VB.
Silk screen: VBFB1630.
Brand: VBsemi.
Package: TO251.
Detailed parameter description: .
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Channel Type: N—Channel.
Maximum Drain Current: 25A.
Maximum Drain-Source Voltage: 60V.
On-Resistance: RDS(ON) =32mΩ @ VGS=10V, VGS=20V.
Gate Threshold Voltage: Vth=2.4V.
Application Introduction:.
FTU36N06N-VB is an N-Channel field effect transistor , with excellent properties such as high leakage current, low leakage voltage, and low on-resistance. It adopts TO251 standard package and is suitable for a variety of electronic applications. .
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Main application field modules: .
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Power switch module: Due to the N-Channel structure of FTU36N06N-VB, it is suitable for power switch modules to achieve efficient power control and management. .
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Motor drive module: Can be used in motor drive modules to ensure efficient performance when the motor is running, such as in power tools and small motor drives. .
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Power inverter module: Suitable for power inverter module, used to convert DC power to AC power, such as solar inverter. .
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High current load switch module: Due to the maximum leakage current of 25A, it can be used in high current load switch modules, such as power switch circuits, high-power LED drivers, etc. .
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Precautions for use: .
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Please use it in accordance with the specifications and application guide provided by the manufacturer, and ensure that the working conditions are within the specified range of the component. .
Ensure that the circuit design is reasonable to prevent overcurrent, overvoltage, etc. from causing damage to the device. .
Pay attention to proper thermal design, especially in high power applications, to ensure that the device is within the normal operating temperature range. .
Follow the relevant standards of soldering and packaging to ensure reliable connection between the device and the circuit board.