Model: FTD36N06N-VB.
Silk screen: VBE1638.
Brand: VBsemi.
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Parameter description: .
- N channel.
- Rated voltage: 60V.
- Maximum current: 45A.
- Static on-resistance (RDS(ON)): 24mΩ@10V, 28mΩ@4.5V, 20Vgs(±V).
- Threshold voltage (Vth): 1.8V.
- Package Type: TO252.
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Application Introduction: .
FTD36N06N-VB is an N-channel MOSFET transistor suitable for a variety of electronic devices and applications with excellent voltage tolerance degree and current handling capabilities. The following are some possible application areas: .
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1. Power module: FTD36N06N-VB can be used in power modules to support medium voltage and current applications and is suitable for power switches, DC-DC converters and inverters. Transformer design. .
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2. Motor control: This MOSFET is suitable for motor control circuits and can be used in motor drive systems, electric vehicles and industrial automation equipment, supporting high current and high efficiency. .
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3. Battery management: This MOSFET can be used in battery management systems for battery charge and discharge control and protection. It is suitable for electric vehicles, solar energy storage systems and other fields. .
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4. DC-DC converter: Among DC-DC converters, FTD36N06N-VB can be used for voltage rise and fall and power conversion, and is suitable for industrial equipment, communication base stations and power modules. .
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5. Automotive electronics: In the field of automotive electronics, it can be used in electronic control units (ECUs), vehicle circuit protection and battery management systems to support the high power and high current requirements of automotive electronics. .
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In summary, the FTD36N06N-VB is a versatile N-channel MOSFET transistor suitable for a variety of high-power, high-voltage applications to provide excellent performance and reliability. It is particularly suitable for applications requiring high power switching and voltage control.