Model: FR420-VB .
Silk screen: VBE165R04 .
Brand: VBsemi .
Parameters: TO-252; N-Channel, 650V; 4A; RDS(ON)=2200mΩ @ VGS=10V, VGS=20V; Vth=3.5V; .
Package: TO-252 .
.
Detailed parameter description and application introduction:.
- **Model:** FR420-VB.
- **Silk screen:** VBE165R04.
- **Brand:** VBsemi.
- **Package:** TO-252.
.
**Main parameters:** .
- **Channel type:** N-Channel.
- **Maximum withstand voltage:** 650V.
- **Maximum current:** 4A.
- ** On-resistance (RDS(ON)):** 2200mΩ @ VGS=10V, VGS=20V.
- **Threshold voltage (Vth):** 3.5V.
.
**Application Introduction :**.
This N-Channel MOSFET is suitable for electronic modules in a variety of fields, especially where current control is required. The following are some possible application areas: .
.
1. **Power module:** Suitable for power switches, power management, and other power circuits that require N-Channel MOSFETs. .
.
2. **Power Factor Correction (PFC):** Due to its high withstand voltage capability, it is suitable for power factor correction circuits to improve power efficiency. .
.
3. **Power Inverter:** Used in power inverter to convert DC power to AC power, commonly used in solar and battery applications. .
.
4. **High Voltage Application:** Due to its high withstand voltage capability, it is suitable for electronic equipment that needs to handle high voltage. .
.
**Precautions for use:**.
- When using, make sure the working voltage does not exceed 650V. .
- Select the appropriate drive voltage (VGS) to achieve the required performance based on the parameters provided in the datasheet. .
- Avoid exceeding maximum current and power ratings to ensure component reliability and long life.