Model: FR1205-VB.
Silkscreen: VBE1638.
Brand: VBsemi.
Parameters: N-channel, 60V, 45A, RDS(ON) 24mΩ @ 10V, 28mΩ @ 4.5V, 20Vgs (±V); 1.8Vth (V).
Package: TO252.
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Detailed parameter description and application introduction:.
1. Channel type: N-channel.
- This means that this is an N-channel MOSFET, which is commonly used in electronic devices, especially in applications that need to control positive voltage power supplies. .
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2. Rated voltage (VDS): 60V.
- This is the maximum voltage that the trench MOSFET can withstand, indicating that it is suitable for circuits that need to handle up to 60V. .
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3. Rated Current (ID): 45A.
- This is the rated current of the trench MOSFET, indicating the high current load it can handle. .
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4. Static Drain-Source Resistance (RDS(ON)): .
- RDS(ON) is the resistance of the trench MOSFET in the on state. At 10V, its resistance is 24mΩ, while at 4.5V it is 28mΩ. This indicates that in the on state, its resistance is very low, which helps to reduce power consumption and heat. .
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5. Gate-Source Voltage Rating (Vgs): 20V (±V).
- This indicates that the gate-source voltage is rated to range between plus and minus 20V. The gate-source voltage is used to control the on and off states of the MOSFET. .
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6. Threshold Voltage (Vth): 1.8V.
- This is the threshold voltage of the channel MOSFET, which indicates the voltage that needs to be applied on the gate to make the device start conducting. .
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Application Introduction: .
This type of N-channel MOSFET is suitable for a variety of high-power applications, including but not limited to the following fields and modules: .
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1. Power Switch: This MOSFET can be used in high-power power switching modules such as DC-DC converters to achieve efficient power conversion. .
2. Motor Control: It can be used for high-power motor drive and control because it can handle high current loads. .
3. Power Inverter: In solar inverters and UPS (Uninterruptible Power Supply), N-channel MOSFET can be used to control the flow of power. .
4. High Power Amplifier: In high-power audio amplifiers and high-frequency amplifiers, it can be used for power amplification. .
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In conclusion, this type of N-channel MOSFET is suitable for areas that need to handle high power and high current loads to meet the needs of power switching and power management, especially high power applications that need to handle positive voltage power supplies. Due to its low drain-source resistance and high rated current, it is suitable for high power applications.