Model: FQU13N10L. Silkscreen: VBFB1101M. Brand: VBsemi. Parameters:. - Channel type: N-channel. - Rated voltage: 100V . - Rated current: 15A . - RDS(ON): 115mΩ @ 10V, 120mΩ @ 4.5V . - Gate-source voltage range: ±20V . - Gate-source threshold voltage: 1.41V . - Package type: TO251. . Application Introduction:. FQU13N10L (silkscreen: VBFB1101M) is an N-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction: . . Detailed parameter description: . FQU13N10L is an N-channel power MOSFET with high voltage and current carrying capacity. The main parameters include rated voltage of 100V, rated current of 15A, RDS(ON) of 115mΩ @ 10V, 120mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of 1.41V, and package type of TO251. . . Application field: . FQU13N10L (VBFB1101M) is suitable for a variety of fields and application scenarios, mainly used in circuits that require high voltage and high current carrying capacity. The following are some typical application fields: . . 1. Power management module: FQU13N10L can be used in power management modules to provide efficient power conversion and stable current output, thereby improving the power consumption and efficiency of the system. . 2. Power tools and household appliances: It can be applied to motor drive circuits in power tools and household appliances to provide efficient and reliable power output. . 3. Battery management system: FQU13N10L is suitable for charge and discharge control circuits in battery management systems to provide efficient and reliable battery management. . 4. Automotive electronic systems: FQU13N10L can be applied to power management, motor drive and lighting control in automotive electronic systems to meet the requirements of automotive electronic systems for high voltage and high power. . . In summary, FQU13N10L (VBFB1101M) is an N-channel power MOSFET suitable for power management modules, power tools, household appliances, battery management systems and automotive electronic systems. It has high voltage and current carrying capacity and is suitable for circuits that require high performance and reliability.
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