Model: FQU11P06-VB.
Silk screen: VBFB2610N.
Brand: VBsemi.
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Parameter Description:.
- P-channel.
- Rated voltage: -60V.
- Maximum current: -25A.
- Static on-resistance (RDS(ON)): 66mΩ@10V, 80mΩ@4.5V, 20Vgs(±V).
- Threshold voltage (Vth): -1.43V.
- Package type: TO251.
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Application Introduction:.
FQU11P06-VB is a P-channel MOSFET transistor suitable for a variety of electronic devices and applications with high voltage tolerance and moderate current handling capability. Here are some possible application areas: .
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1. Power modules: FQU11P06-VB can be used in power modules to support high voltage and high current applications, suitable for power switches, DC-DC converters and inverter designs. .
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2. Battery protection: This MOSFET can be used in battery protection circuits to prevent overcurrent and overvoltage problems of the battery during charging and discharging, suitable for portable devices and battery management systems. .
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3. DC-DC converters: In DC-DC converters, FQU11P06-VB can be used for voltage step-up and step-down and power conversion, suitable for medical equipment, communication base stations and military applications. .
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4. Automotive electronics: In the field of automotive electronics, it can be used in electronic control units (ECUs), vehicle circuit protection and battery management systems, supporting the high voltage requirements of automotive electronics. .
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5. Industrial Control: FQU11P06-VB is suitable for industrial control applications such as PLC, sensor control and factory automation, especially for high voltage and high power requirements. .
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In summary, FQU11P06-VB is a versatile high voltage P-channel MOSFET transistor suitable for a variety of high voltage, high current applications to provide excellent performance and reliability. It is particularly suitable for applications that require high power switching and voltage control.