Model: FQP85N06-VB .
Silk screen: VBM1615 .
Brand: VBsemi .
Parameters: TO-220; N-Channel, 60V; 60A; RDS(ON)=11mΩ @ VGS=10V, VGS=20V; Vth=1.9V; .
Package: TO-220 .
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Detailed parameter description and application introduction:.
- **Model:** FQP85N06-VB.
- **Silk screen:** VBM1615.
- **Brand:** VBsemi.
- **Package:** TO-220.
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**Main parameters:** .
- **Channel type:** N-Channel.
- **Maximum withstand voltage:** 60V.
- **Maximum current:** 60A.
- ** On-resistance (RDS(ON)):** 11mΩ @ VGS=10V, VGS=20V.
- **Threshold voltage (Vth):** 1.9V.
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**Application Introduction :**.
This MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is suitable for electronic modules in a variety of fields, especially where current control is required. The following are some possible application areas: .
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1. **Power Module:** Due to its lower on-resistance and high current carrying capacity, it can be used in power switches to increase efficiency and reduce power consumption. .
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2. **Motor Driver:** In the motor control module, it can be used as a motor driver to help achieve precise motor control. .
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3. **Power Inverter:** Used in power inverter to convert DC power to AC power, commonly used in solar and battery applications. .
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4. **Current Control Module:** Due to its N-Channel channel type, it can be used for current control and switching applications. .
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Please note that the specific application depends on the design needs and circuit requirements. In integrated circuit design and electronic product manufacturing, engineers select appropriate components based on specific technical specifications and performance requirements.