Model: FQD6N40CTM-VB.
Silk screen: VBE165R07S.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Maximum withstand voltage: 650V.
- Maximum continuous current: 7A.
- Turn-on resistance (RDS(ON)): 700mΩ @ 10Vgs.
- Threshold voltage (Vth): 3.5V.
- Package type: TO252.
.
Application Introduction: .
FQD6N40CTM-VB is a high voltage N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) suitable for electronic applications that need to handle high voltage and high power. The following are some of its main application areas: .
.
1. Switching power supply module: The high withstand voltage and suitable current carrying capacity of this MOSFET make it very suitable for use in switching power supply modules, such as switching regulators converters and offline power adapters for efficient power conversion. .
.
2. Motor drive: FQD6N40CTM-VB can be used in motor drive circuits, such as industrial motor control, electric vehicle drive and power tools, to achieve high-power motor operation. .
.
3. Power inverter: In applications requiring high voltage inverter, such as solar inverters and electric vehicle inverters, this MOSFET can be used in power inverter circuits to convert DC power into Converted to alternating current. .
.
4. High-voltage power switch: Due to its high withstand voltage characteristics, FQD6N40CTM-VB can also be used for high-voltage power switches to control the on-off state of the circuit. .
.
In short, FQD6N40CTM-VB is a high-performance N-channel MOSFET suitable for various electronic applications that need to handle high voltage and power. It finds widespread use in modules such as switching power supplies, motor drives, power inverters and high-voltage power switches. .