Model: FQD50N06-VB.
Silkscreen: VBE1615.
Brand: VBsemi.
Parameter Description:.
- Channel type: N-channel.
- Rated voltage: 60V.
- Rated current: 60A.
- On resistance: 9mΩ @ 10V, 11mΩ @ 4.5V.
- Gate-source maximum voltage: 20Vgs (±V).
- Gate threshold voltage: 1.87Vth (V).
- Package type: TO252.
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Application Introduction:.
FQD50N06-VB is an N-channel MOSFET suitable for high-power and high-current applications. Its low on resistance gives it excellent conduction characteristics and can provide efficient current conduction. Therefore, FQD50N06-VB is widely used in the following field modules: .
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1. Power module: FQD50N06-VB can be used as a power switch to control the on and off of the power supply to achieve stable and reliable power output. .
2. Inverter: FQD50N06-VB is suitable for inverter modules, which can convert DC power into AC power and is commonly used in home appliances, industrial equipment and other fields. .
3. Power tools: Since FQD50N06-VB has high current carrying capacity and low on resistance, it can be used in power tools to provide high-power driving capability. .
4. Automotive electronics: FQD50N06-VB is suitable for automotive electronic modules, such as electric vehicle charging piles, electric vehicle control modules, etc., which can provide efficient power transmission and control functions. .
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In short, FQD50N06-VB is a high-performance N-channel MOSFET suitable for high-power and high-current applications, and is widely used in power modules, inverters, power tools, and automotive electronics modules. .