FNK10N25B-VB, a 2个N-channel TSSOP8 MOSFET datasheet parameters video explanation
Silk screen: VBC6N3010.
Brand: VBsemi.
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Parameter description: .
- 2 N channels.
- Rated voltage: 30V.
- Maximum current: 8.6A.
- Static on-resistance (RDS(ON)): 10mΩ@10V, 12mΩ@4.5V, 20Vgs(±V).
- Threshold voltage range (Vth) :1~3V.
- Package type: TSSOP8.
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Application introduction: .
FNK10N25B-VB is a dual N-channel MOSFET transistor, suitable for a variety of electronic equipment and application fields , with excellent voltage tolerance and current handling capabilities. The following are some possible application areas: .
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1. Power module: FNK10N25B-VB can be used in power modules to support medium voltage and current applications, suitable for power switches, DC-DC converters and inverters. Transformer design. .
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2. Motor control: This MOSFET is suitable for use in motor control circuits and can be used in drive systems for household appliances, small power tools and low-power electric vehicles. .
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3. Battery management: This MOSFET can be used in battery management systems for battery charge and discharge control and protection, and is suitable for portable equipment and low-power electronic products. .
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4. DC-DC converter: Among DC-DC converters, FNK10N25B-VB can be used for voltage rise and fall and power conversion, suitable for mobile communication equipment, embedded systems and power modules. .
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5. Low power electronics: This MOSFET is suitable for low power electronic applications such as sensor control, LED driving and small electronic circuits. .
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In summary, the FNK10N25B-VB is a versatile dual N-channel MOSFET transistor suitable for a variety of medium voltage, medium current applications to provide excellent performance and reliability. It is particularly suitable for applications requiring medium power switching and voltage control.
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