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FIR4N65BPG-VB, a N-channel TO251 MOSFET datasheet parameters video explanation
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**Product model:** FIR4N65BPG-VB .
**Silk screen:** VBFB165R04 .
**Brand:** VBsemi .
**Parameters:**.
- Package: TO251 .
- Type: N—Channel .
- Rated voltage: 650V.
- Rated current: 4A.
- On-state resistance (RDS(ON)): 2200mΩ @ VGS=10V , VGS=20V.
- Threshold voltage (Vth): 3.5V .
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**Package:** TO251 .
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**Detailed parameter description and application introduction:* *.
This device is an N-Channel field effect transistor in a TO251 package, suitable for a variety of application scenarios. Key parameters include high voltage rating, low on-state resistance, and moderate threshold voltage, allowing for good performance under different power supply and load conditions. .
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**Application Areas:**.
1. **Power Module:** Due to its high voltage rating, it can be used in switching power supplies and inverters in power modules. .
2. **Drive module:** Suitable for various drive modules, such as motor drive and lighting control. .
3. **LED drive module:** In the field of LED lighting, it can be used in LED drive modules to provide high-efficiency power switches. .
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**Function:**.
- **Power module:** Used for switching power supply and inverter to achieve high-efficiency conversion of power supply. .
- **Drive module:** Provides reliable current drive to control external loads. .
- **LED driver module:** As part of the LED lighting system, it ensures the stable driving and brightness control of the LED. .
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**Usage Precautions:**.
1. Please operate in accordance with the maximum ratings provided in the data sheet to ensure the reliability and stability of the device. .
2. Consider heat dissipation needs in the design, especially in high current and high power applications. .
3. Make sure to use it within the appropriate voltage range below the threshold voltage (Vth) to ensure normal operation. .
4. Avoid exceeding the rated voltage and current to avoid damaging the device.

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