Model: FDY3000NZ-VB.
Silk screen: VBTA3230NS.
Brand: VBsemi.
.
Parameter description: .
- **Double N channel:** This device contains two N Channel MOSFET, current flows in N-channel and is suitable for different types of applications such as power switches, etc. .
- **Operating voltage (VDS):** 20V, indicating the upper limit of the withstand voltage of MOSFET, suitable for medium and low voltage circuits. .
- **Continuous current (ID):** 0.2A, indicating the maximum current that the MOSFET can withstand. .
- **On-resistance (RDS(ON)):** 300mΩ @ 4.5V, 350mΩ @ 2.5V, 20Vgs (±V), indicating the resistance of the MOSFET in the on-state, these two values are respectively corresponding to different gate voltages. .
- **Threshold voltage (Vth):** 0.3V, indicating the gate voltage required for the MOSFET to enter the conductive state. .
- **Package:** SC75-6, this is a small surface mount package. .
.
Application Introduction: .
This dual N-channel MOSFET is suitable for a variety of low power electronic applications, including but not limited to: .
.
1. **Power Switch :** For use in low power power switching circuits such as small DC-DC converters and power management units. .
.
2. **Battery Protection:** Used in small battery protection circuits to control battery charging and discharging to prevent overcurrent and overvoltage. .
.
3. **Signal switch:** Used for small signal switching circuits, such as signal amplifiers, audio amplifiers and small sensor interfaces. .
.
4. **LED Driver:** Used in low-power LED lighting applications to achieve efficient LED lighting control. .
.
5. **Portable Devices:** Used for power management and signal switching in small portable electronic devices, such as smart watches, headphones and sensor modules. .
.
This dual N-channel MOSFET is suitable for electronic circuits that require low-power N-channel devices, providing reliable current control and switching performance, and is usually used in low-power electronic fields to improve efficiency and performance.