Model: FDT86113LZ. Silkscreen: VBJ1101M. Brand: VBsemi. . Detailed parameter description:. - Type: N-channel MOSFET. - Maximum withstand voltage: 100V. - Maximum current: 5A. - On-resistance: 100mΩ@10V, 120mΩ@4.5V. - Gate-source voltage: 20Vgs (±V). - Gate threshold voltage: 2~4Vth. - Package: SOT223. . Application introduction:. FDT86113LZ is an N-channel MOSFET suitable for medium voltage and medium current applications. Its maximum withstand voltage is 100V, maximum current is 5A, with low on-resistance and high performance. . . This device is suitable for module design in multiple fields, mainly including: . 1. Power management module: Suitable for power management module responsible for power switch and load switch control. . 2. Lighting module: Can be used for LED driving and lighting control. . 3. Industrial automation module: Suitable for load switch and power control in the field of industrial automation. . . In short, FDT86113LZ is suitable for module design in medium voltage and medium current application fields, including power management, lighting module and industrial automation module.
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