**VBsemi FDS6675BZ-NL-VB**.
.
**Detailed parameter description:**.
- Type: P-Channel MOSFET.
- Rated voltage (VDS): -30V.
- Maximum current (ID): -11A.
- On-resistance (RDS(ON)): 10mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -1.42V.
- Package: SOP8.
.
**Application introduction:**.
This device is suitable for medium power, high current applications, especially in the following field modules:.
.
1. **Power module:**.
- Used in medium power power modules to provide efficient energy conversion. .
.
2. **Motor drive:**.
- In motor control modules, used for medium power motor drives. .
.
3. **Power inverter:**.
- Suitable for medium inverters, such as electric vehicle inverters. .
.
**Application areas:**.
- Electric vehicle systems.
- Industrial electronics.
- Power management modules.
.
**Function:**.
- Provides large current carrying capacity.
- Reduces power loss.
- Enables efficient energy conversion in medium power systems.
.
**Precautions for use:**.
1. Please operate according to the recommended operating conditions in the data sheet. .
2. Pay attention to the specific value of the threshold voltage and make sure to consider this parameter in the design. .
3. Ensure that the heat dissipation design is sufficient to prevent overheating. .
4. Consider current and voltage limits in design to avoid device damage.