According to the model and parameters provided, the following are the detailed parameters and application introduction of the MOSFET model FDS4897AC-NL-VB: .
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**Model: ** FDS4897AC-NL-VB.
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**Silk screen:** VBA5638.
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**Brand:** VBsemi.
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**Parameters:**.
- Channel type: N+P Channel.
- Rated voltage: ±60V.
- Maximum current: 6.5A (forward current) / -5A (reverse current).
- Static drain-source resistance (RDS( ON)): 28mΩ @ 10V (forward current), 51mΩ @ 10V (reverse current), 34mΩ @ 4.5V (forward current), 60mΩ @ 4.5V (reverse current).
- Gate-source voltage threshold (Vth): ±1.9V.
- Standard gate-source voltage (±V): 20V.
- Package: SOP8.
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**Product Application Introduction:**.
FDS4897AC-NL-VB is an N+P channel MOSFET with high voltage rating, bidirectional current capability and moderate drain-source resistance, making it suitable for use in power switches and amplifiers in a variety of electronic devices and modules application. The performance parameters of this MOSFET make it suitable for a variety of applications. .
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**Product application areas:**.
1. **Power management module:** This model of MOSFET can be used in power management modules, such as power switches, in order to effectively control current, Improve efficiency and reduce power consumption. .
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2. **Motor drive:** Can be used in motor drive circuits, such as DC motors and stepper motors, to provide efficient motor control and power amplification. .
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3. **Inverter and power inverter:** Suitable for inverter circuits, used to convert DC power to AC power, usually used in solar inverters and power inverters converter. .
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4. **Battery protection:** Used in battery protection circuit to control the charging and discharging of the battery to ensure the safety and performance of the battery. .
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5. **Power switch:** In power switch applications, used to switch power connections, such as in power management units. .
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In short, FDS4897AC-NL-VB MOSFET has wide applications in many fields for power control, current switching and signal amplification purposes. Due to its performance parameters, it plays a key role in electronic modules and devices.