Model: FDP047AN08A0-VB.
Silk screen: VBM1808.
Brand: VBsemi.
Parameters:.
- Package type: TO220.
- Channel type: N—Channel.
- Maximum drain voltage (Vds): 80V.
- Maximum drain current (Id): 100A.
- Static drain-source resistance (RDS(ON)): 7mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): 2.7V.
.
Package: TO220.
.
Application Introduction:.
FDP047AN08A0-VB is an N-Channel trench MOSFET suitable for high power, high current circuit and module design, especially in applications that require high current switching and high performance N-Channel MOSFET. .
.
Field module application: .
1. **Power module:** Suitable for high-power switching power supply, power inverter and other module designs, capable of providing efficient power conversion and stable power output. .
.
2. **Motor drive module:** Due to its high current and low leakage voltage characteristics, it can be used in motor drive and control modules to provide reliable current output and driving performance, especially in applications requiring higher power. .
.
3. **Battery protection module:** Used in battery charge and discharge management circuits to provide efficient battery management and protection functions. .
.
4. **High-power LED lighting module:** In LED lighting systems that require high brightness and high power, FDP047AN08A0-VB can be used in switching power supply design to achieve efficient LED lighting. .
.
5. **Current control module:** Suitable for high-power modules that require precise current control, such as current sources, current amplifiers, etc. .
.
Please note that the above are some typical high-power application scenarios. When actually using them, they need to be selected and designed according to the specific circuit and system requirements. When integrating FDP047AN08A0-VB, it is recommended to read its data sheet carefully to obtain detailed electrical characteristics and operation information.