Model: FDMS9600S.
Silkscreen: VBQA3303G.
Brand: VBsemi.
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Parameter Description:.
- MOSFET type: 2 N-channel.
- Rated voltage (VDS): 30V .
- Rated current (ID): 60A .
- On resistance (RDS(ON)): 4.3mΩ@10V, 4.8mΩ@4.5V .
- Threshold voltage (Vth): 1.2V .
- Package type: DFN8(5X6).
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Application Introduction:.
This FDMS9600S MOSFET is a high power N-channel MOSFET suitable for applications requiring high power switching and control. It has high rated voltage and rated current capabilities, suitable for high power switching and power conversion applications. .
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This MOSFET can be widely used in modules in the following fields: .
- Power management module: used for high-power switching power supplies, DC-DC converters, inverters and other high-power power modules. .
- Motor control module: used for high-power DC motor drive, stepper motor drive and other high-power motor control. .
- Electric vehicle control module: used for power switching and control in electric vehicle battery management and drive systems. .
- Industrial automation module: used for power switching and power supply modules for high-power industrial control systems. .
- Communication base station module: used for power amplification and switching modules in communication base stations. .
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In short, the FDMS9600S MOSFET is suitable for various application scenarios that require high-power N-channel MOSFETs for high-power switching and power conversion, providing highly reliable current control and power conversion functions, and is particularly suitable for modules for high-power applications.